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APT6015JVR
600V 35A 0.150
S G D S
POWER MOS V (R)
Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(R) also achieves faster switching speeds through optimized gate layout.
SO
ISOTOP (R)
2 T-
27
"UL Recognized"
* Faster Switching * Lower Leakage
* 100% Avalanche Tested * Popular SOT-227 Package
G
D
S
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current
1
All Ratings: TC = 25C unless otherwise specified.
APT6015JVR UNIT Volts Amps
600 35 140 30 40 450 3.6 -55 to 150 300 35 50
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/C C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
2500
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, I D = 250A) On State Drain Current
2
MIN
TYP
MAX
UNIT Volts Amps
600 35 0.150 25 250 100 2 4
(VDS > ID(on) x R DS(on) Max, VGS = 10V)
2
Drain-Source On-State Resistance
(VGS = 10V, 0.5 ID[Cont.] )
Ohms A nA Volts
050-5554 Rev C
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
APT Website - http://www.advancedpower.com
Bend, Oregon 97702-1035 F-33700 Merignac - France Phone: (541) 382-802 8 Phone: (33) 5 57 92 15 15
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street
FAX: (541) 388-036 4 FAX: (33) 5 56 47 97 61
EUROPE
Avenue J.F. Kennedy Bat B4 Parc Cadera Nord
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT6015JVR
Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 0.5 VDSS ID = ID[Cont.] @ 25C VGS = 15V VDD = 0.5 VDSS ID = ID[Cont.] @ 25C RG = 0.6 MIN TYP MAX UNIT
7500 900 320 315 45 125 15 13 45 5
9000 1260 480 475 70 190 30 26 70 10
ns nC pF
Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS ISM VSD t rr Q rr Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage
1 2
MIN
TYP
MAX
UNIT Amps Volts ns C
35 140 1.3 690 15.9
(Body Diode) (VGS = 0V, IS = -ID[Cont.] )
Reverse Recovery Time (IS = -I D[Cont.], dl S /dt = 100A/s) Reverse Recovery Charge (IS = -I D[Cont.], dl S /dt = 100A/s)
THERMAL /PACKAGE CHARACTERISTICS
Symbol RJC RJA VIsolation Torque Characteristic Junction to Case Junction to Ambient RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.) Maximum Torque for Device Mounting Screws and Electrical Terminations. MIN TYP MAX UNIT C/W Volts
0.28 40 2500 13
lb*in
1 Repetitive Rating: Pulse width limited by maximum junction
temperature.
2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 4.08mH, R = 25, Peak I = 35A j G L
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.3 , THERMAL IMPEDANCE (C/W) D=0.5 0.1 0.2 0.05 0.1 0.05
PDM
0.01 0.005
Note: 0.02 0.01 SINGLE PULSE
t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC
050-5554 Rev C
Z 0.001 10-5
JC
10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10-4
APT6015JVR
100 V GS=6V, 7V, 10V & 15V I , DRAIN CURRENT (AMPERES) D 5.5V 80 I , DRAIN CURRENT (AMPERES) D 80 VGS=6V, 7V, 10V & 15V 5.5V 100
60
5V
60
5V
40 4.5V 20 4V 0 50 100 150 200 250 300 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 100 0
40 4.5V 20 4V 0 4 8 12 16 20 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS 0
(ON), DRAIN-TO-SOURCE ON RESISTANCE
T J = -55C T J = +25C TJ = +125C
1.6
V
GS
I , DRAIN CURRENT (AMPERES) D
NORMALIZED TO = 10V @ 0.5 I [Cont.]
D
80
1.4
60
V DS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ < 0.5 % DUTY CYCLE
VGS =10V 1.2 VGS=20V
40 T J = +125C T J = +25C 0 TJ = -55C
1.0
20
DS
0 2 4 6 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS 40 I , DRAIN CURRENT (AMPERES) D
R
0.8
0
20 40 60 80 100 ID , DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) BV 25
DSS
I = 0.5 I
D D
1.15
1.10
30
1.05
20
1.00
10
0.95
50 75 100 125 150 T C, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE (ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 2.5
[Cont.]
0
-25 0 25 50 75 100 125 150 T J, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
0.90
-50
V
GS
= 10V
2.0
1.1 1.0
1.5
0.9 0.8 0.7 050-5554 Rev C
1.0
0.5
DS
0.0 -50
-25 0 25 50 75 100 125 150 T J, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-25 0 25 50 75 100 125 150 T C, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
R
0.6
-50
APT6015JVR
200 ID , DRAIN CURRENT (AMPERES) 100 50
OPERATION HERE LIMITED BY R DS (ON)
30,000 10S 100S C, CAPACITANCE (pF) 10,000 5,000 C oss 1,000 500 Crss Ciss
10 5
1mS
10mS 1 .5 100mS DC
TC =+25C TJ =+150C SINGLE PULSE
.1
1 5 10 50 100 600 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA
I
D
.01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE IDR, REVERSE DRAIN CURRENT (AMPERES) 200 100 T J =+150C 50 T J =+25C
100
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
20
= I [Cont.]
D
16
VDS =120V VDS=300V
12 VDS =480V 8
10 5
4
100 200 300 400 500 600 Qg , TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
0
0
0 0.4 0.8 1.2 1.6 2.0 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
1
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
1.95 (.077) 2.14 (.084)
* Source
Drain
* Source terminals are shorted internally. Current handling capability is equal for either Source terminal.
* Source Dimensions in Millimeters and (Inches)
050-5554 Rev C
Gate
VIsolation , RMS Voltage (50-60 Hz Sinusoidal Waveform from Terminals to Mounting Base for 1 Minute) = 2500 Volts Minimum
ISOTOP(R) is a Registered Trademark of SGS Thomson. APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095
"UL Recognized" File No. E145592
5,262,336 5,528,058

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